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Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Identifieur interne : 000505 ( Main/Exploration ); précédent : 000504; suivant : 000506

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Auteurs : Sumin Choi ; David J. Rogers [France] ; Eric V. Sandana [France] ; Philippe Bove [France] ; Ferechteh H. Teherani [France] ; Christian Nenstiel [Allemagne] ; Axel Hoffmann [Allemagne] ; Ryan Mcclintock [États-Unis] ; Manijeh Razeghi [États-Unis] ; David Look [États-Unis] ; Angus Gentle ; Matthew R. Phillips ; Cuong Ton-That

Source :

RBID : PMC:5547142

Abstract

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.


Url:
DOI: 10.1038/s41598-017-07568-z
PubMed: 28784987
PubMed Central: 5547142


Affiliations:


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<p id="Par1">We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al
<sub>2</sub>
O
<sub>3</sub>
film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV
<italic>H</italic>
-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.</p>
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